N 溝道，Power Trench? MOSFET，40V，108A，2.5mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench? 工藝生產(chǎn)。 先進(jìn)的硅技術(shù)和 Dual CoolTM 封裝技術(shù)完美融合，可在提供最小 rDS(on) 的同時(shí)通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ? Dual CoolTM 頂側(cè)冷卻PQFN封裝\n? 最大值 rDS(on) = 2.5 mΩ（VGS = 10 V, ID = 27 A時(shí)）\n? 最大值 rDS(on) = 4.1 mΩ（VGS = 4.5 V, ID = 21 A時(shí)）\n? 高性能技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n? 符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/8321ld/marking.html">8321LD；Package：DualCoolTM33；N-Channel Dual CoolTM 33 PowerTrench? MOSFET

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ONSEMI

安森美半導(dǎo)體

P-Channel MOSFET With Gate Driver For Load Switch Application

General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) toget

文件：222.09 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

2.5A Output Current, Gate Drive Optocoupler in Optoplanar Wide Body SOP 5-Pin

Description The FOD8321 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving medium power IGBT/MOSFETs. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power systems. Features ■ Fairchild’

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FAIRCHILD

仙童半導(dǎo)體

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導(dǎo)體