N 溝道，Power Trench? MOSFET，30V，14.8A，7.2mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻而定制的。 該器件非常適用于筆記本電腦和便攜式電池組中的電源管理和負(fù)載開關(guān)應(yīng)用。 ?VGS = 10 V，ID = 14.8 A時(shí)，最大rDS(on) = 7.2 mΩ\n?VGS = 4.5 V，ID = 12.4 A時(shí)，最大rDS(on) = 9.5 mΩ\n?通態(tài)電阻rDS(on)極低的高性能技術(shù)\n?終端是符合RoHS標(biāo)準(zhǔn)的無鉛產(chǎn)品;

ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? MOSFET 30 V, 14.8 A, 7.2 m

文件：213.79 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 6.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

文件：316.22 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

Gated PMT Modules

The H7680/-01 PMT modules are capable of high-speed, high-repetition gated operation. An optimum design in the combination of circuit and photomultiplier tube delivers excellent gating characteristics including a minimum gate width of 30 ns (H7680-01), 100 kHz repetition rate, and a gate extinctio

文件：109.93 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會(huì)社

Backflush protection circuit with built-in inductive load current

文件：598.92 Kbytes 頁數(shù)：6 Pages

HMSEMI

華之美半導(dǎo)體