P 溝道，PowerTrench? MOSFET，-20V，-56A，6.5mΩ

此 P 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench? 工藝生產(chǎn)，這一先進(jìn)工藝已針對 rDS(ON)、開關(guān)性能和穩(wěn)固性進(jìn)行了優(yōu)化。 ? 最大值 rDS(on) = 6.5 mΩ（VGS = -4.5 V, ID = -14 A 時(shí)）\n? 最大值 rDS(on) = 9.8 mΩ（VGS = -2.5 V, ID = -11 A 時(shí)）\n? 最大值 rDS(on) = 20 mΩ（VGS = -1.8 V、ID = -9 A 時(shí)）\n? 高性能溝道技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n? 高功率和高電流處理能力，采用廣泛使用的表面貼裝封裝\n? 無鉛并符合 RoHS 標(biāo)準(zhǔn);

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安森美半導(dǎo)體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

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30V N-Channel PowerTrench MOSFET

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30V N-Channel PowerTrench? SyncFET?

General Description The FDS6688AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688AS includes an integrated Schottky dio

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仙童半導(dǎo)體