N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：231.19 Kbytes 頁(yè)數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：222.39 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道 PowerTrench? MOSFET 100V，4.4A，60mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。 ?最大 rDS(on) = 60 mΩ（VGS = 10 V、ID = 4.4 A）\n?最大 rDS(on) = 80 mΩ（VGS = 6.0 V、ID = 3.8 A）\n?低密勒電荷\n?低 QRR體二極管\n?優(yōu)化高頻率時(shí)的效率\n?UIS 能力（單脈沖和重復(fù)脈沖）以前的開(kāi)發(fā)類型 82744\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

文件：222.39 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 4.4A, 60m廓

文件：379.58 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體