20V N & P-Channel PowerTrench MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

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FAIRCHILD

仙童半導(dǎo)體

20V N & P-Channel PowerTrench?MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

文件：284.44 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

20V N&P溝道Power Trench? MOSFET

這些N和P溝道MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。這些器件經(jīng)過專門設(shè)計，能以極小的尺寸提供極低的功耗，非常適合那些不宜采用更大更昂貴的TSSOP-8和SSOP-6封裝的應(yīng)用。 ?Q1 0.7A, 20V. RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V\n?Q2 -0.6A, -20V. RDS(ON) = 420mΩ @ VGS = -4.5V RDS(ON) = 630mΩ @ VGS = -2.5V\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?SC70-60封裝 小尺寸（比標準SSOT-6小51%）；薄型（1mm厚）。;

ONSEMI

安森美半導(dǎo)體

20V N & P-Channel PowerTrench MOSFETs

XW

芯微半導(dǎo)體

20V N 和 P 溝道 PowerTrench? MOSFET

這些雙N和P溝道MOSFET采用飛兆半導(dǎo)體先進的PowerTrench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。這些器件經(jīng)過專門設(shè)計，能以極小的尺寸提供極低的功耗，非常適合那些不宜采用更大更昂貴的TSSOP-8和SSOP-6封裝的應(yīng)用。 ?Q1 0.7 A、20 V。RDS(ON) = 300 m? (VGS = 4.5 V) RDS(ON) = 400 m? (VGS = 2.5 V)\n?Q2 -0.6A, -20V。RDS(ON) = 420 m? (VGS = -4.5 V) RDS(ON) = 630 m? (VGS = -2.5 V)\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的 RDS(ON)\n?SC70-60封裝小尺寸（比標準SSOT-6小51%）；薄型（1mm厚）。\n?符合 AEC Q101 標準\n?符合 RoHS 標準;

ONSEMI

安森美半導(dǎo)體