P-Channel 2.5V Specified PowerTrench??MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e

文件：206.75 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 20V (D-S) MOSFET

Application Interfacing Switching ? Portable equipment and battery Load Switch

文件：1.94787 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

P 溝道，PowerTrench? MOSFET，2.5V 指定，-1.2 A，180 mΩ

此P溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件非常適合便攜式電子產(chǎn)品應(yīng)用。 ?-1.2 A，-20 V。 RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V。\n? RDS(on) = 0.18 Ω @ VGS = -4.5 V\n? RDS(on) = 0.25 Ω @ VGS = -2.5 V\n?低柵極電荷（3.3 nC，典型值）。\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)。\n?緊湊的工業(yè)標(biāo)準(zhǔn)SC70-6表面貼裝封裝。;

ONSEMI

安森美半導(dǎo)體

Selection Guide

SANKEN IGBT FGT313, FGT312, FGT412, FGT612, FGM622S, FGM603, FGM623S, MGD623N, MGD623S

文件：175.58 Kbytes 頁數(shù)：4 Pages

SANKEN

三墾

2-PACK MOSFET MODULE

文件：393.8 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

12V 1Watt 27MHz Transmitter

文件：295.21 Kbytes 頁數(shù)：3 Pages

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