-30V Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

FDFS2P753Z將飛兆PowerTrench MOSFET技術(shù)所具有的卓越性能與正向壓降非常低的肖特基勢壘整流器融合在SO-8封裝中。此器件專門設(shè)計為DC至DC轉(zhuǎn)換器的單封裝解決方案。 它具有快速開關(guān)、低柵極電荷的MOSFET以及極低的通態(tài)電阻。 獨立連接的肖特基二極管允許其在大量DC/DC轉(zhuǎn)換器拓撲下使用。 Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A\nMax rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A\nVF \nVF \nSchottky and MOSFET incorporated into single power surface mount S0-8 package\nElectrically independent Schottky and MOSFET pinout for design flexibility\nRoHS Compliant;

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode -30V, -3A, 115m廓

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Integrated P-Channel PowerTrench? MOSFET and Schottky Diode -30V, -3A, 115m廓

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