isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：352.02 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?strong>FDD9410；Package：D-PAK；N-Channel Power Trench? MOSFET

文件：706.74 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：352.99 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

文件：930.31 Kbytes 頁數(shù)：4 Pages

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百域芯

40V N 溝道邏輯電平 PowerTrench? MOSFET

N-Channel Logic Level PowerTrench? MOSFET 40 V, 50 A, 4.2 mΩ ? 典型 RDS(on) = 3.3 mΩ（VGS = 10 V、ID = 80 A）\n? UIS 能力\n?符合 AEC Q101 標(biāo)準(zhǔn);

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安森美半導(dǎo)體

MOSFET NMOS DPAK 40V 4.1 MOHM

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安森美半導(dǎo)體