isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：330.61 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 80 V, ID= 95A RDS(ON)

文件：1.0335 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench MOSFET

文件：1.06299 Mbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲印：FDD86369；Package：D-PAK；Channel PowerTrench? MOSFET 80 V, 90 A, 7.9 mΩ

Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Prim

文件：543.95 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

N 溝道，PowerTrench? MOSFET，80V，90A，7.9mΩ

此 N 溝道 MOSFET 是專為使用同步或傳統(tǒng)開關(guān) PWM 控制器來改進(jìn) DC/DC 轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低 rDS(on) 和高速開關(guān)進(jìn)行了優(yōu)化。 ?典型值 rDS(ON) = 5.9m? （VGS = 10V、ID = 80A）\n?典型值 Qg(tot) = 34 nC（VGS = 10V、ID = 80A）\n?UIS 能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Automotive Engine Control

文件：462.62 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：310.17 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N 溝道，PowerTrench? MOSFET，80 V，90 A，7.9 mΩ

N-Channel PowerTrench? MOSFET 80 V, 90 A, 7.9 mΩ ? Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A\n? Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A\n? UIS Capability\n? RoHS Compliant\n? Qualified to AEC Q101;

ONSEMI

安森美半導(dǎo)體