isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 80 V, ID= 95A RDS(ON)

文件：1.04666 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench MOSFET

文件：996.89 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

N 溝道 PowerTrench? MOSFET 80 V，100 A，4.2 mΩ

N-Channel PowerTrench? MOSFET 80 V, 100 A, 4.2 mΩ ? Typical RDS(on) = 3.3 mΩ at VGS = 10 V, ID = 80 A\n? Typical Qg(TOT) = 68 nC at VGS = 10 V, ID = 80 A\n? UIS Capability\n? RoHS Compliant;

ONSEMI

安森美半導體

Automotive Engine Control

文件：340.92 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

N 溝道 PowerTrench? MOSFET 80V，100A，4.2 mΩ，

N-Channel PowerTrench? MOSFET 80V, 100A, 4.2 mΩ, ?典型 RDS(on) = 3.3 mΩ（VGS = 10 V、ID = 80 A）\n?典型 Qg(tot) = 68 nC（VGS = 10 V、ID = 80 A）\n?UIS 能力\n?符合RoHS標準\n?符合 AEC Q101 標準;

ONSEMI

安森美半導體