100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

文件：454.31 Kbytes 頁數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?strong>FDD86113；Package：TO-252；100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

文件：454.31 Kbytes 頁數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.74335 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 104mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：354.39 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Shielded Gate PowerTrench? MOSFET 100 V, 5.5 A, 104 m廓

文件：244.91 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，屏蔽門極，PowerTrench? MOSFET，100V，5.5 A，104 mΩ

這一N溝道邏輯電平MOSFET器件采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 旨在為增強(qiáng)ESD電壓電平而增加了G-S齊納管。 ? Shielded Gate MOSFET Technology\n? Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A\n? Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A\n? HBM SD Protection Level > 6 kV typical (Note 4)\n? High Performance Trench Technology for Extremely Low rDS(on)\n? High Power and Current Handling Capability in a;

ONSEMI

安森美半導(dǎo)體