30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

文件：107.47 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench MOSFET

文件：110.7 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，邏輯電平，PowerTrench? MOSFET，30V，66A，8mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開(kāi)關(guān)PWM控制器來(lái)改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 已針對(duì)低柵極點(diǎn)和、低RDS(ON)、快速開(kāi)關(guān)和超低RDS(ON)進(jìn)行了優(yōu)化，采用小型封裝。 ?66 A，30 V。\n?RDS(on) = 8 mΩ @ VGS = 10 V\n?RDS(on) = 10 mΩ @ VGS = 4.5 V\n?低柵極電荷\n?快速開(kāi)關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體