N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：226.16 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel, Logic Level, PowerTrench? MOSFET

ONSEMI

安森美半導(dǎo)體

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：226.16 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

文件：873.81 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

30V N-Channel PowerTrench MOSFET

文件：122.79 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，30A，20mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極點和低RDS(ON)、快速開關(guān)和超低RDS(ON)進行了優(yōu)化，采用小型封裝。 ?30 A，30 V。\n?RDS(on) = 20 mΩ @ VGS = 10 V\n?RDS(on) = 28 mΩ @ VGS = 4.5 V\n?低柵極電荷（典型值9 nC）。\n?快速開關(guān)\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體