30V N-Channel Fast Switching PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 50A, 30

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

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ISC

無錫固電

快速開關(guān)，N 溝道，PowerTrench? MOSFET，30V，50A，8.8mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進(jìn)行了優(yōu)化。 ?50A，30 V\n?RDS(ON) = 8.8 mΩ @ VGS = 1V\n?RDS(ON) = 11.3 mΩ @ VGS = 4.5V\n?低柵極電荷 \n?快速開關(guān)\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體

Single N-Channel, Logic-Level, PowerTrench MOSFET

General Description This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swit

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仙童半導(dǎo)體

Single N-Channel Logic-Level PowerTrench? MOSFET 30V,11.5A, 10.5m廓

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仙童半導(dǎo)體

Single N-Channel Logic-Level Power Trench MOSFET

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仙童半導(dǎo)體