N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1

文件：169.53 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：352.26 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

30V N-Channel PowerTrench MOSFET

文件：118.78 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench MOSFET

文件：118.78 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，12A，14.5mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，該工藝專為最大限度地降低通態(tài)電阻并保持卓越的開(kāi)關(guān)性能而量身定制。 ?12 A, 30V\n?RDS(ON) = 14.5 mΩ @ VGS = 10V\n?RDS(ON) = 21.0 mΩ @ VGS = 4.5V\n?低柵極電荷 \n?快速開(kāi)關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體