N-Channel, PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ? 38 A, 60 V. RDS(on) = 0.02

文件：83.16 Kbytes 頁(yè)數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =21mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.85 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 30A RDS(ON)

文件：763.2 Kbytes 頁(yè)數(shù)：4 Pages

BYCHIP

百域芯

N 溝道，PowerTrench? MOSFET，38A，21mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專(zhuān)為最大程度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。 ?38 A，60 V\n?RDS(on) = 0.021 Ω @ VGS = 10 V\n?RDS(on) = 0.025 Ω @ VGS = 6 V\n?低柵極電荷（典型值33 nC）。\n?開(kāi)關(guān)速度快。\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體