60V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =55mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

60V N 溝道 PowerTrench? MOSFET 18A，55mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實現(xiàn)具有更高總效率的DC/DC電源設(shè)計。 ?18 A，60 V\n?RDS(ON) = 55 mΩ @ VGS = 10 V\n?RDS(ON) = 64 mΩ @ VGS = 6 V\n?專門針對高頻DC/DC轉(zhuǎn)換器應(yīng)用進(jìn)行了優(yōu)化。\n?低柵極電荷。\n?極快速開關(guān)。;

ONSEMI

安森美半導(dǎo)體

LED DIGIT DISPLAY

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FORYARD

復(fù)洋

LED DIGIT DISPLAY

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FORYARD

復(fù)洋

Pushbutton switch, right angle, illumination

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APEX-ELECTRONICS