絲?。?strong>FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：672.05 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

絲?。?strong>FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：580.97 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/40p30/marking.html">40P30；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos = -40V ID=-30 A RDS(ON)

文件：1.61253 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -40V, ID= -40A RDS(ON)

文件：822.46 Kbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm

Features ■ Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A ■ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A ■ Typ Qg(TOT) = 21nC at VGS = -10V ■ High performance trench technology for extremely low rDS(on) ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Inverter ■

文件：419.58 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

40V P-Channel PowerTrench? MOSFET

文件：388.49 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 4 0 V (D-S) MOSFET

文件：1.08018 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>FDD4243；Package：TO252；P-Channel PowerTrench? MOSFET -40V, -14A, 64m廓

文件：427.58 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

P 溝道，PowerTrench? MOSFET，-40V，-14A，44mΩ

此P溝道MOSFET采用飛兆半導(dǎo)體專有的PowerTrench?技術(shù)生產(chǎn)，具有低rDS(on)和優(yōu)化的Bvdss能力，在各種應(yīng)用中都具有卓越的表現(xiàn)。 ?最大rDS(on) = 44mΩ（VGS = -10V且ID = -6.7A時(shí)）\n?最大rDS(on) = 64mΩ（VGS = 4.5V且ID = 5.5A時(shí)）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

40V P-Channel PowerTrench? MOSFET

文件：388.49 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體