400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：726.67 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.59 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，400V，2A，3.4?，DPAK

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 3.4? （最大值）@ VGS = 10V, ID = 1A\n?低柵極電荷（典型值 4.5nC） \n?低 Crss（典型值 3.7pF） \n?100% 經(jīng)過雪崩擊穿測試;

ONSEMI

安森美半導(dǎo)體

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：726.67 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：726.67 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

Power MOSFET

文件：1.07862 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體