20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.7A@ TC=25℃ ·Drain Source Voltage -VDSS=20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =9mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -20V, ID= -100A RDS(ON)

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BYCHIP

百域芯

N 溝道，PowerTrench? MOSFET，20V，50A，9mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關PWM控制器來改進DC/DC轉換器整體功效而設計的。 已針對低柵極點和低RDS(ON)、快速開關和超低RDS(ON)進行了優(yōu)化，采用小型封裝。 ?-50 A，-20V。\n?RDS(ON) = 9 mΩ @ VGS = 10 V\n?RDS(ON) = 11 mΩ @ VGS = 4.5 V\n?RDS(ON) = 16 mΩ（VGS = -2.5V）\n?低柵極電荷（16nC，典型值）\n?快速開關速度\n?高性能溝道技術可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導體