100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 6 V ? Low gate charge

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=25A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =46mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

N-Channel 100-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

N 溝道，PowerTrench? MOSFET，100V，25A，46mΩ

此N溝道MOSFET是專(zhuān)為使用同步或傳統(tǒng)開(kāi)關(guān)PWM控制器來(lái)改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開(kāi)關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動(dòng)且更安全（在高頻段也是如此）的MOSFET，可實(shí)現(xiàn)具有更高總效率的DC/DC電源設(shè)計(jì)。 ?25 A，100 V。\n?RDS(ON) = 46 mΩ @ VGS = 10 V\n?RDS(ON) = 51 mΩ @ VGS = 6 V\n?低柵極電荷（38nC，典型值）\n?快速開(kāi)關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體