N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?

Features ? rDS(ON) = 24m? (Typ.), VGS = 10V, ID = 44A ? Qg(tot) = 24nC (Typ.), VGS = 10V ? Low Miller Charge ? Low Qrr Body Diode ? Optimized efficiency at high frequencies ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/D

文件：233.67 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=44A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =28mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.45 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 100V, ID= 40 A RDS(ON)

文件：725.32 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel 100-V (D-S) MOSFET

文件：984.84 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N 溝道，UltraFET? Trench MOSFET，100V，44A，28mΩ

N-Channel UltraFET? Trench MOSFET, 100V, 44A, 28mΩ ?rDS(ON) = 24mΩ（典型值），VGS = 10V，ID = 44A\n?Qg(tot) = 24nC（典型值），VGS = 10V\n?低密勒電荷\n?低Qrr體二極管\n?優(yōu)化高頻率時(shí)的效率\n?UIS能力（單脈沖和重復(fù)脈沖）;

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3672/marking.html">3672；Package：TO-252；N-Channel MOSFET

Application | ? Reverse Battery protection | Load switch ? Power management ? PWM Application |

文件：3.20511 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

P-Channel PowerTrench? MOSFET -40V, -14A, 64m廓

文件：431.6 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓

文件：117.19 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，UltraFET? Trench MOSFET，100V，44A，28mΩ

N-Channel UltraFET? Trench MOSFET, 100V, 44A, 28mΩ ?典型 rDS(on) = 24 m? （VGS = 10 V、ID = 44 A）\n?VGS = 10V時(shí)，典型Qg = 24nC\n?低米勒電荷\n?低 Qrr體二極管\n?優(yōu)化高頻率時(shí)的效率\n?UIS能力（單脈沖和重復(fù)脈沖）\n?符合AEC Q101\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體