Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel

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FAIRCHILD

仙童半導(dǎo)體

Dual N & P-Channel PowerTrench? MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ

Features Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant General Description These dual

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ONSEMI

安森美半導(dǎo)體

雙 N 和 P 溝道 PowerTrench? MOSFET，80V

這些雙N溝道和P溝道增強模式功率MOSFET采用飛兆半導(dǎo)體先進的PowerTrench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通電阻并保持卓越開關(guān)性能而定制的。 ? N-Channel: 80V, 13.9A, 80mΩ\n? P-Channel: -80V, -9.4A, 190mΩ\n? Q1： N溝道\n?最大rDS(on) = 88m? VGS = 6V, ID = 4.1A時Q2: P溝道\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準;

ONSEMI

安森美半導(dǎo)體

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

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OPTOWAY

奧普薇

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

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OPTOWAY

奧普薇

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

文件：133.56 Kbytes 頁數(shù)：2 Pages

OPTOWAY

奧普薇