P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. Features ■ –6.7 A, –12 V. RDS(ON) = 28 m? @ VGS = –4.5 V RDS(ON) = 41 m? @ VGS = –2.5 V RDS(ON) = 90 m? @ VGS = –1.8 V ■ Fast

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FAIRCHILD

仙童半導(dǎo)體

P-Channel 1.8V Specified PowerTrench

Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter Genera

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ONSEMI

安森美半導(dǎo)體

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -30V, ID= -20A RDS(ON)

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BYCHIP

百域芯

P 溝道 1.8V 指定 PowerTrench? MOSFET，-12V，-6.7A，28mΩ

此P溝道1.8V額定MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)的穩(wěn)固?hào)艠O版本。 它已針對電池功率管理應(yīng)用進(jìn)行了優(yōu)化。 ?-6.7A，-12V\n?RDS(ON) = 28 mΩ @ VGS = -4.5V\n?RDS(ON) = 41 mΩ @ VGS = -2.5V\n?RDS(ON) = 90 mΩ @ VGS = -1.8V\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體