200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 3.6 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V ? Low gate charge ? Fast switching speed ?

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =720mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 200 V, ID= 8 A RDS(ON)

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BYCHIP

百域芯

N 溝道，PowerTrench? MOSFET，200V，3.6A，130mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實現(xiàn)具有更高總效率的DC/DC電源設(shè)計。 ?3.6 A, 200 V\n?RDS(ON) = 130 mΩ @ VGS = 10V \n?低柵極電荷 \n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體