N-Channel PowerTrench MOSFET 150V, 21A, 66m

Features ? rDS(ON) = 58m? (Typ.), VGS = 10V, ID = 7A ? Qg(tot) = 19nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distributed Power Architectures

文件：268.34 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 150V, 21A, 66mΩ

Features ? rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A ? Qg(tot) = 19nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distributed Power Architecture

文件：466.73 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=21A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =66mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 150V, ID= 20 A RDS(ON)

文件：685.83 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N 溝道，PowerTrench? MOSFET，150V，21A，66mΩ

N-Channel PowerTrench? MOSFET 150V, 21A, 66mΩ ?rDS(ON) = 58mΩ（典型值），VGS = 10V，ID = 7A\n?Qg(tot) = 19nC（典型值），VGS = 10V\n?低密勒電荷\n?低Qrr體二極管\n?UIS能力（單脈沖和重復(fù)脈沖）\n?符合AEC Q101;

ONSEMI

安森美半導(dǎo)體