isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無(wú)錫固電

N-Channel PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，30V，90A，5.0mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 ?RDS(on) = 3.7m? （典型值）@ VGS = 10V，ID = 25A\n?快速開(kāi)關(guān)速度\n?低柵極電荷，QG = 33nC（典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The G050N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半導(dǎo)體

N-Channel MOSFET Transistor

文件：346.17 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Fast switching MOSFET for SMPS Optimized technology for DC/DC converters

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INFINEON

英飛凌