N 溝道，PowerTrench? MOSFET，邏輯電平，30V，6.1A，27 mΩ

該N溝道邏輯電平MOSFET是低電壓和電池電源應(yīng)用的有效解決方案。 由于采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝，該器件具有最低的通態(tài)電阻，可以優(yōu)化功耗。 非常適合重視線路內(nèi)功率損耗的應(yīng)用。 ?VGS = 10V，ID = 6.1A時，最大RDS(on) = 27mΩ\n?VGS = 4.5V，ID = 5.3A時，最大rDS(on) = 36 mΩ\n?SuperSOT? -6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）。\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Single N-Channel, Logic Level, PowerTrench? MOSFET 30V, 6.1A, 27m廓

文件：278.74 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

DC-DC Converter Applications

Features ? Composite type composed of a ow ON-resistance N-channel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates high-density mounting. ? The FX855 is formed with 2 chips, one being equivalent to the 2SK1

文件：135.54 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent hFE specified up to 10 Amps PARTMARKING DETAIL - FZT855 COMPLEMENTARY TYPE - FZT955

文件：516.12 Kbytes 頁數(shù)：3 Pages

ZETEX

SOT223 NPN SILICON PLANAR

Features ? BVCEO > 150V ? IC = 5A high Continuous Collector Current ? ICM = 10A Peak Pulse Current ? Very Low Saturation Voltage VCE(sat)

文件：176.07 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體