N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：70.75 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：70.75 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

LM2655 2.5A High Efficiency Synchronous Switching Regulator

General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the designer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost

文件：803.77 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

N 溝道增強型場效應(yīng)晶體管，30V，5A，35mΩ

這些N溝道增強模式功率場效應(yīng)晶體管采用飛兆半導(dǎo)體專有的高單元密度DMOS技術(shù)生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低通態(tài)電阻而定制的。 此類器件特別適合筆記本電腦、便攜電話、PCMICA卡等低電壓應(yīng)用及其他需要采用極小封裝外形表面貼裝封裝、具有快速開關(guān)和低線內(nèi)功率損耗的電池供電電路。 ? 5 A，30 V\n? RDS(ON) = 0.035 Ω @ VGS = 10 V\n?RDS(ON) = 0.055 Ω @ VGS = 4.5 V\n?專有SuperSOTTM-6封裝設(shè)計采用銅引腳架構(gòu)，以獲得出色的熱性能和電氣性能\n?高密度單元設(shè)計，可實現(xiàn)極低的RDS(ON)\n?出色的導(dǎo)通阻抗和最大DC電流能力;

ONSEMI

安森美半導(dǎo)體