N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. Features

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N-Channel PowerTrench? MOSFET

General Description\nThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC\nconverters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. ? 5.5 A, 30 V.? RDS(ON)= 30 m?@ VGS= 4.5 V\n???????????????? ? RDS(ON)= 26 m?@ VGS= 10 V\n? High performance trench technology for extremely low RDS(ON)\n? Low gate charge (13 nC typical)\n? High power and current handling capability;

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N-Channel PowerTrench? MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications ? DC

文件：180.75 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed. Features

文件：313.11 Kbytes 頁數(shù)：8 Pages

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仙童半導(dǎo)體

N-Channel PowerTrench MOSFET

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N-Channel PowerTrench MOSFET

文件：80.45 Kbytes 頁數(shù)：5 Pages

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N 溝道，PowerTrench? MOSFET，30V，5.5A，26 mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進行了優(yōu)化。 ?5.5 A，30 V。\n?RDS(on) = 30 mΩ @ VGS = 4.5 V\n?RDS(on) = 26 mΩ @ VGS = 10 V\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?低柵極電荷（典型值13nC）\n?高功率和高電流處理能力;

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安森美半導(dǎo)體