| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S 文件:1.36533 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?strong>FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S 文件:1.36533 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?strong>FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S 文件:1.36533 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?strong>FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S 文件:1.36533 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
FDC642P | P-Channel 2.5V Specified PowerTrench??OSFET P-Channel 2.5V Specified PowerTrench? MOSFET 文件:269.68 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
P-Channel PowerTrench? MOSFET -20V, -4A, 100m廓 Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO 文件:263.33 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
FDC642P P-Channel 2.5V specified PowerTrench MOSFET Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO 文件:132.99 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
SSOT-6 |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON Semiconductor |
21+ |
SuperSOT?-6 |
3000 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!! |
詢價 | ||
ON |
25+ |
SOT-6 |
6675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
FAIRCHILD |
24+ |
SOT23-6 |
598000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ON(安森美) |
23+ |
標準封裝 |
8000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON |
2022+ |
TSOT-23-6 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
ON(安森美) |
23+ |
標準封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
ON(安森美) |
23+ |
SSOT-6 |
18243 |
公司只做原裝正品,假一賠十 |
詢價 | ||
onsemi/安森美 |
兩年內(nèi) |
NA |
2000 |
實單價格可談 |
詢價 |
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