P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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FAIRCHILD

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P-Channel 2.5V Specified PowerTrench MOSFET

文件：138.51 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified PowerTrench MOSFET

文件：138.51 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P 溝道，PowerTrench? MOSFET，2.5V 指定，-20V，-3.5A，80mΩ

該額定電壓為2.5V的P溝道MOSFET采用飛兆的低電壓PowerTrench工藝制成。 它已針對(duì)電池的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-3.5 A, -20 V\n?RDS(ON) = 80 mΩ（VGS = -4.5 V時(shí)）\n?RDS(ON) = 110 mΩ（VGS = -2.5 V時(shí)）\n?低柵極電荷（7.2nC典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體