30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q12.5 A, 30V. RDS(ON)= 95 mW@ VGS

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FAIRCHILD

仙童半導體

N 和 P 溝道，PowerTrench? MOSFET，30V

這些N和P溝道MOSFET采用飛兆半導體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關性能而定制的。 這些器件經(jīng)過專門設計，能在極小的空間內實現(xiàn)優(yōu)異的功率耗散，非常適合那些不宜采用更大更昂貴的SO-8和TSSOP-8封裝的應用。 ?Q1 2.5 A, 30V\n?RDS(on) = 95 mΩ@ VGS = 10 V\n?RDS(ON) = 150 mΩ @ VGS = 4.5 V\n?Q2 –2.0 A, 30V。\n?RDS(on) = 150 mΩ@ VGS = -10 V\n?RDS(on) = 220 mΩ @ VGS = -4.5 V\n?低柵極電荷\n?高性能溝道技術可實現(xiàn)極低的RDS(ON)\n?SuperSOT –6封裝： 小尺寸（比標準SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半導體

3 Pin, Low-Power, P Reset Circuits

文件：56.64 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features ? Visible light output : 635 nm Typ ? Optical output power :

文件：36.44 Kbytes 頁數(shù)：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features ? Visible light output: λp = 635 nm Typ ? Single longitudin

文件：95.13 Kbytes 頁數(shù)：4 Pages

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