Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

文件：264.69 Kbytes 頁(yè)數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

文件：251.77 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/323k/marking.html">323K；Package：SOT23-6；Load Switch with Level-Shift

Product Summary ● -2.3A,-8V ● RDS(ON)-55m2 @ VGS=4.5V(Typ) ● RDS(ON)=65m2 @ VGS=2.5V(Typ) ● FDC6331L Pin to Pin fully compatible

文件：3.65224 Mbytes 頁(yè)數(shù)：7 Pages

TECHPUBLIC

臺(tái)舟電子

集成式負(fù)載開關(guān)

這些集成的負(fù)載開關(guān)采用飛兆專有的、高單元密度DMOS技術(shù)生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 這些器件特別適合需要低傳導(dǎo)損耗和輕松驅(qū)動(dòng)的低壓高邊負(fù)載開關(guān)應(yīng)用。 ?VDROP=0.2V @ VIN=5V，IL=1A，VON/OFF= 1.5V至8V VDROP=0.3V @ VIN=3.3V，IL=1A，VON/OFF= 1.5V至8V\n?為極低導(dǎo)通電阻而設(shè)計(jì)的高單元密度\n?VON/OFF齊納管可增強(qiáng)耐靜電放電能力>6kV人體模型\n?SuperSOT?-6封裝設(shè)計(jì)（使用銅引線框架），可提供出色的熱和電氣能力;

ONSEMI

安森美半導(dǎo)體

Package：SOT-23-6 細(xì)型，TSOT-23-6；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR SWITCH P-CH 1:1 SUPERSOT6

ONSEMI

安森美半導(dǎo)體