Dual P-Channel 1.8V PowerTrench Specified MOSFET

General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features ? –2.3 A, –20 V.

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/312f/marking.html">312F；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Ros(on) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

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TECHPUBLIC

臺舟電子

Dual P-Channel 20 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

雙 P 溝道，PowerTrench? MOSFET，1.8V 指定，-20V，-2.3A，115mΩ

這些P溝道1.8V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 ?–2.3 A，–20 V。\n?VGS = –4.5 V時，RDS(ON) = 115 mΩ\n?VGS = –2.5 V時，RDS(ON) = 155 mΩ\n?VGS = –1.8 V時，RDS(ON) = 225 mΩ\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半導(dǎo)體