Dual P-Channel 2.5V Specified PowerTrench??MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

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FAIRCHILD

仙童半導(dǎo)體

絲印：312F；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Features Vos =-20V,lp = -3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Roson) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

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TECHPUBLIC

臺(tái)舟電子

Dual P-Channel 20 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

雙 P 溝道，PowerTrench? MOSFET，2.5V 指定，-20V，-1.9A，170mΩ

這些P溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專(zhuān)為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開(kāi)關(guān)性能而定制的。 這些器件經(jīng)過(guò)專(zhuān)門(mén)設(shè)計(jì)，能以極小的尺寸提供出色的功耗，非常適合那些不宜采用更大更昂貴的SO-8和TSSOP-8封裝的應(yīng)用。 ?-1.9 A，-20 V\n?RDS(on) = 0.170 Ω @ VGS = -4.5 V\n?RDS(on) = 0.250 Ω @ VGS = -2.5 V\n?低柵極電荷（典型值2.3nC）\n?快速開(kāi)關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）;

ONSEMI

安森美半導(dǎo)體