P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features ? –5.5 A, –20 V. RDS(ON) = 33 m? @ VGS = –4.5 V RDS(ON) = 43 m? @ VGS = –2.5 V

文件：359.42 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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P-Channel 1.8V Specified PowerTrench MOSFET

ONSEMI

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P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features ? –5.5 A, –20 V. RDS(ON) = 33 m? @ VGS = –4.5 V RDS(ON) = 43 m? @ VGS = –2.5 V

文件：359.42 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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-20V P-Channel Enhancement Mode MOSFET

Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

文件：1.68433 Mbytes 頁數(shù)：5 Pages

UMW

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P-Channel 1.8V Specified PowerTrench MOSFET

文件：91.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

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P-Channel 1.8V Specified PowerTrench MOSFET

文件：91.48 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

P 溝道，PowerTrench? MOSFET，1.8V Specified，-20V，-5.5A，33mΩ

此P溝道1.8V額定MOSFET采用飛兆的低電壓PowerTrench工藝。 它已針對電池的電源管理應用進行了優(yōu)化。 ?-5.5 A, -20 V\n?RDS(on) = 33 mΩ @ VGS = -4.5V\n?RDS(on) = 43 mΩ @ VGS = -2.5V\n?RDS(on) = 60 mΩ @ VGS = -1.8V\n?快速開關速度\n?高性能溝道技術可實現(xiàn)極低的RDS(ON);

ONSEMI

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