P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features ? –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4

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P-Channel 2.5V Specified PowerTrench MOSFET

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Complementary PowerTrench MOSFET

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

文件：211.51 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

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P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features ? –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4

文件：216.51 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

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P-Channel 2.5V PowerTrench Specified MOSFET

文件：66.83 Kbytes 頁數(shù)：5 Pages

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P-Channel 30-V (D-S) MOSFET

文件：1.00615 Mbytes 頁數(shù)：9 Pages

VBSEMI

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P-Channel 2.5V PowerTrench Specified MOSFET

文件：66.83 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

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P 溝道 PowerTrench? MOSFET，2.5V 指定，-20V，-5.5A，35mΩ

此P溝道2.5V額定MOSFET采用穩(wěn)固柵極版本的飛兆先進的PowerTrench工藝生產。 它已針對柵極驅動電壓范圍(2.5V – 12V)廣泛的電源管理應用進行了優(yōu)化。 ?-5.5 A, -20 V\n?RDS(on) = 35 mΩ @ VGS = - 4.5V\n?RDS(on) = 50 mΩ @ VGS = - 2.5V\n?快速開關速度\n?高性能溝道技術可實現(xiàn)極低的RDS(ON);

ONSEMI

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Complementary PowerTrench MOSFET

ONSEMI

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