Dual N-Channel 100V Specified PowerTrench MOSFET

General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/601/marking.html">601；Package：SOT23-6；100V Dual N-Channel Enhancement Mode MOSFET

Application - Power switch - DC/DC converters

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TECHPUBLIC

臺舟電子

雙 N 溝道，100V 指定 PowerTrench? MOSFET，1.0A，500mΩ

這些N溝道100V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件經(jīng)過專門設(shè)計(jì)，能在極小的空間內(nèi)實(shí)現(xiàn)優(yōu)異的功率耗散，非常適合那些不宜采用更大更昂貴的SO-8和TSSOP-8封裝的應(yīng)用。 ?1.0 A，100 V\n?RDS(on) = 500 mΩ@ VGS = 10 V\n?RDS(on) = 550 mΩ @ VGS = -6V\n?低柵極電荷（3.7nC，典型值）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8封裝小72%）；薄型（1mm厚）;

ONSEMI

安森美半導(dǎo)體

100V Dual N-Channel PowerTrench MOSFET

General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RD

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FAIRCHILD

仙童半導(dǎo)體

P-Ch 30V Fast Switching MOSFETs

Description The FKN3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3601 meet the RoHS and Green Product requirement with full function reliability approved.

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FETEK

臺灣東沅

P-Ch 30V Fast Switching MOSFETs

Description The FKUC3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKUC3601 meet the RoHS and Green Product requirement with full function reliability approved.

文件：551.49 Kbytes 頁數(shù)：4 Pages

FETEK

臺灣東沅