200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 1.1

文件：201.74 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/262p/marking.html">262P；Package：SOT23-6；N-Channel MOSFET 200V, 1.5A, 0.7

Features Vbs =200V b= 1.5A Roson)

文件：1.11279 Mbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

N 溝道，PowerTrench? MOSFET，200V，1.1A，725mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進(jìn)行了優(yōu)化。 ?1.1A, 200V\n?RDS(on) = 725 mΩ@ VGS = 10 V\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力\n?快速開關(guān)速度\n?低柵極電荷（典型值8nC）;

ONSEMI

安森美半導(dǎo)體

200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 4.9 A, 2

文件：110.96 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =720mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.75 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 200 V, ID= 8 A RDS(ON)

文件：752.93 Kbytes 頁數(shù)：5 Pages

BYCHIP

百域芯