150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 1.4 A, 1

文件：176.99 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement MOSFET

■ Features ● VDS (V) = 150V ● ID = 1.4A (VGS = 10V) ● RDS(ON)

文件：2.06369 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/252p/marking.html">252P；Package：SOT23-6；150V N-Channel Enhancement Mode MOSFET

Features BVDSS 150V ID@VGS 10V, TA=25°C 1.5A RDS(ON) typ. @VGS-10V, ID-1.5A 240m Ω

文件：4.03166 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

N-Channel 100 V (D-S) MOSFET

文件：1.88279 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N 溝道，PowerTrench? MOSFET，150V，1.4A，425mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計的。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進(jìn)行了優(yōu)化。 ?1.4 A，150 V\n?RDS(on) = 425 mΩ@ VGS = 10 V\n?RDS(on) = 475 mΩ @ VGS = 6 V\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?低柵極電荷（典型值8nC）\n?高功率和高電流處理能力\n?快速開關(guān)速度;

ONSEMI

安森美半導(dǎo)體