isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=300A@ TC=25℃ ·Drain Source Voltage- VDSS= 40V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Powe

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ISC

無錫固電

MOSFET - Power, Single N-Channel, TOLL 40 V, 0.67 m, 240 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? Small Footprint (TOLL) for Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

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安森美半導體

N-Channel PowerTrench? MOSFET

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FAIRCHILD

仙童半導體

絲印：FDBL9401L；Package：H-PSOF8L；N??hannel Logic Level PowerTrench MOSFET

文件：382.21 Kbytes 頁數(shù)：8 Pages

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安森美半導體

N 溝道，PowerTrench? MOSFET，40V，300A，0.5mΩ

N-Channel PowerTrench? MOSFET for automotive engine control, power-train management, solenoid and motor drivers, integrated starters / alternators, primary switch for 12-V systems. ? Typical RDS(on) = 0.5 mΩ at VGS = 10V, ID = 80 A\n? Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A\n? UIS Capability\n? RoHS Compliant\n? Qualified to AEC Q101;

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安森美半導體

Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ, 240 A

Automotive Power MOSFET in a TOLL package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. ? Low RDS(on)\n? Minimize Conduction Losses\n? Low QG and Capacitance\n? Minimize Driver Losses\n? AEC?Q101 Qualified and PPAP Capable\n? These Devices are Pb?Free and are RoHS Compliant\n? Small Footprint (TOLL) for Compact Design;

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安森美半導體

N 溝道，邏輯電平，PowerTrench? MOSFET，40 V，300 A，0.55 mΩ

N-Channel Logic Level PowerTrench? MOSFET for automotive engine control, power-train management, solenoid and motor drivers, integrated starters / alternators, primary switch for 12-V systems. ? Typical RDS(on) = 0.47 mΩ at VGS = 10V, ID = 80 A\n? Typical Qg(tot) = 269 nC at VGS = 10V, ID = 80 A\n? UIS Capability\n? Qualified to AEC Q101\n? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHSCompliant;

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安森美半導體

包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 40V 58.4/240A 8HPSOF

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安森美半導體