N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features ? rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 84nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distribute

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FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench MOSFET

Features ? rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 84nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distribute

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

無(wú)錫固電

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A ● Qg(tot) = 84nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

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KEXIN

科信電子

絲?。?strong>FDB3632；Package：TO-263AB；N-Channel PowerTrench? MOSFET 100V, 80A, 9mΩ

Features ? rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 84nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 ? RoHS Compliant Applications ? DC/DC converters and Off-Line UPS ? Distribute

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ONSEMI

安森美半導(dǎo)體

N 溝道，PowerTrench? MOSFET，100V，80A，9m?

N溝道PowerTrench? MOSFET 100V，80A，9mΩ，飛兆半導(dǎo)體最新的屏蔽柵極PowerTrench? MOSFET，結(jié)合了較小的Q SYNC和軟反向通過(guò)快速切換恢復(fù)固有的體二極管性能，可以大大提高同步整流的效率。 ?RDS(ON) = 7.5mΩ（典型值） @ VGS = 10V, ID = 80A\n?QG(tot) = 84nC（典型值） @ VGS = 10V\n?低米勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 80A, 9m廓

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FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 80A, 9m廓

文件：489.88 Kbytes 頁(yè)數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，100V，80A，9mΩ

N-Channel PowerTrench? MOSFET, 100V, 80A, 9mΩ, Fairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?rDS(ON) = 7.5 mΩ（典型值）、VGS = 10 V、ID = 80 A\n?Qg(tot) = 84nC（典型值）且VGS = 10V\n?低密勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體