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          首頁
                >FDB33N25>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          FDB33N25
          250V N-Channel MOSFET
          
Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 
          文件：688.68 Kbytes 頁數(shù)：2 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          FDB33N25
          N-Channel UniFET? MOSFET 250 V, 33 A, 94 mΩ
          
Features
? RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A
? Low Gate Charge (Typ. 36.8 nC)
? Low Crss (Typ. 39 pF)
? 100% Avalanche Tested

Applications
? PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply

Description
UniFETTM MOSFET is Fairchild Semiconducto
          文件：524.55 Kbytes 頁數(shù)：10 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          FDB33N25
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 33A@ TC=25℃
·Drain Source Voltage
: VDSS= 250V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 94mΩ(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·motor drive, DC-D
          文件：328.19 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          FDB33N25
          250V N-Channel MOSFET
          文件：909.52 Kbytes 頁數(shù)：9 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          FDB33N25TM
          絲?。?strong>FDB33N25；Package：D2-PAK；N-Channel UniFET? MOSFET 250 V, 33 A, 94 mΩ
          
Features
? RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A
? Low Gate Charge (Typ. 36.8 nC)
? Low Crss (Typ. 39 pF)
? 100% Avalanche Tested

Applications
? PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply

Description
UniFETTM MOSFET is Fairchild Semiconducto
          文件：524.55 Kbytes 頁數(shù)：10 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          FDB33N25
          功率 MOSFET，N 溝道，UniFETTM，250 V，33 A，94 m?，D2PAK
          UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設(shè)備用鎮(zhèn)流器。  ?RDS(on) = 94m? （最大值）@ VGS = 10V, ID = 16.5A\n?低柵極電荷（典型值 36.8nC） \n?低 Crss（典型值 39pF） \n?100% 經(jīng)過雪崩擊穿測試;
          ONSEMI
          安森美半導(dǎo)體
          

          FDB33N25TM
          250V N-Channel MOSFET
          
Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 
          文件：688.68 Kbytes 頁數(shù)：2 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          FDB33N25TM
          DESIGN/PROCESS CHANGE NOTIFICATION
          
Description
SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti
          文件：298.83 Kbytes 頁數(shù)：14 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          FDB33N25_06
          250V N-Channel MOSFET
          文件：909.52 Kbytes 頁數(shù)：9 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          FDB33N25TM
          250V N-Channel MOSFET
          文件：909.52 Kbytes 頁數(shù)：9 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • Configuration：
            Single
          • V(BR)DSS Min (V)：
            250
          • VGS Max (V)：
            ±30
          • VGS(th) Max (V)：
            5
          • ID Max (A)：
            33
          • PD Max (W)：
            235
          • RDS(on) Max @ VGS = 10 V(mΩ)：
            94
          • Qg Typ @ VGS = 10 V (nC)：
            36.8
          • Ciss Typ (pF)：
            1640
          • Package Type：
            D2PAK-3/TO-263-2
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          ON
          		

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          16800
          		

          進(jìn)口原裝現(xiàn)貨
          		
詢價
          

          



          ON
          		

          23+
          		

          TO-263
          		

          6850
          		

          只做原裝正品假一賠十為客戶做到零風(fēng)險!!
          		
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          FAIRCHILD
          		

          24+
          		

          TO-263(D2PAK)
          		

          8866
          		

          		
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          FAIRCHIL
          		

          25+
          		

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          90000
          		

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          FAIRCHILD
          		

          20+
          		

          TO-2632L(D2PAK)
          		

          36900
          		

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          仙童
          		

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          6430
          		

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          fairchild
          		

          25+
          		

          to-263/d2
          		

          32500
          		

          普通
          		
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          FAIRCHILD/仙童
          		

          23+
          		

          TO-2632L(D2PAK)
          		

          50000
          		

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          FAIRCHILD/仙童
          		

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          50000
          		

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          FAIRCHILD
          		

          26+
          		

          SOT89
          		

          86720
          		

          全新原裝正品價格最實惠 假一賠百
          		
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          更多FDB33N25供應(yīng)商
            更新時間2026-1-19 14:32:00
        
          
        
          
          
          
            
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