isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

無(wú)錫固電

250V N-Channel PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，250V，50A，42.5mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專(zhuān)為最大限度地降低導(dǎo)通阻抗并保持卓越開(kāi)關(guān)性能而定制的。 ?RDS(on) = 36.3m? （典型值）@ VGS = 10V, ID = 25A\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 RDS(on)\n?低柵極電荷\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體

Open Carrier Frequency Doubler For Microwave Telecommunications

Description The FDC2710 is a passive bridge diode frequency doubler, designed for use in the high volume commercial and test equipment applications. The design utilizes Schottky bridge quad diodes and broadband baluns to attain excellent performance. The use of high temperature solder and welded

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MACOM

Open Carrier Frequency Doubler For Microwave Telecommunications

Description The FDC2710 is a passive bridge diode frequency doubler, designed for use in the high volume commercial and test equipment applications. The design utilizes Schottky bridge quad diodes and broadband baluns to attain excellent performance. The use of high temperature solder and welded

文件：514.64 Kbytes 頁(yè)數(shù)：3 Pages

MA-COM

Open Carrier Frequency Doubler

文件：514.64 Kbytes 頁(yè)數(shù)：3 Pages

MA-COM