N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features ? rDS(ON) = 45m? (Typ.), VGS = 10V, ID = 9A ? Qg(tot) = 26nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distributed Power Architectures

文件：269.7 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 54mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N 溝道，PowerTrench? MOSFET，150V，29A，54mΩ

N-Channel PowerTrench? MOSFET 150V, 29A, 54mΩ, Fairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ? RDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A\n?Qg(tot) = 26nC (Typ.), VGS = 10V\n?低密勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features ? rDS(ON) = 45m? (Typ.), VGS = 10V, ID = 9A ? Qg(tot) = 26nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distributed Power Architectures

文件：247.74 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=29A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =54mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.94 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 150V, ID= 40 A RDS(ON)

文件：876.16 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯