絲?。?strong>FDB2532；Package：D2-PAK；N-Channel PowerTrench? MOSFET 150 V, 79 A, 16 mΩ

Features ? RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A ? QG(tot) = 82 nC ( Typ.) @ VGS = 10 V ? Low Miller Charge ? Low Qrr Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) Applications ? Consumer Appliances ? Synchronous Rectification ? Battery Protection Circuit ?

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 79A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features ? rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 33A ? Qg(tot) = 86nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Formerly developmental type 82884 Applications ? DC/DC conve

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絲?。?strong>FDB2532；Package：TO-263；MOSFET – N-Channel, POWERTRENCH 150 V, 79 A, 16 m

Features ? RDS(ON) = 14 m (Typ.), VGS = 10 V, ID = 33 A ? Qg (tot) = 82 nC (Typ.), VGS = 10 V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant Applicatio

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N 溝道 PowerTrench? MOSFET，150V，79A，16mΩ

N-Channel PowerTrench? MOSFET 150V, 79A, 16mΩ, Fairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?RDS(on) = 14m? （典型值） @ VGS = 10V, ID = 33A\n?QG(tot) = 82nC（典型值） @ VGS = 10V\n?低米勒電荷\n?低 Qrr 體二極管\n?UIS 能力（單脈沖和重復脈沖）\n?符合 AEC Q101 標準;

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N-Channel PowerTrench? MOSFET 150V, 79A, 16m廓

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N-Channel PowerTrench? MOSFET 150V, 79A, 16m廓

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N 溝道，PowerTrench? MOSFET，150V，79A，16mΩ

N-Channel PowerTrench? MOSFET 150V, 79A, 16mΩ, Fairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification ?rDS(ON) = 14 m? （典型值）、VGS = 10 V、ID = 33 A\n?Qg(tot) = 82nC（典型值），VGS = 10V\n?低米勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復脈沖）\n?符合 AEC Q101 標準\n?符合 RoHS 標準;

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