15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Features ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ? Reduced r DS(ON) ? Reduced Miller Capacitance and Low Input Capacitance ? Improved Switching Speed with Low EMI ? 175°C Rated Junction Temperature Applications

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無(wú)錫固電

N-Channel SMPS Power MOSFET

Features ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ● Reduced rDS(ON) ● Reduced Miller Capacitance and Low Input Capacitance ● Improved Switching Speed with Low EMI

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KEXIN

科信電子

功率 MOSFET，N 溝道，UniFETTM，500 V，15 A，380 m?，D2PAK

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開(kāi)關(guān)性能和更高的雪崩能量強(qiáng)度。 該器件系列適用于開(kāi)關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設(shè)備用鎮(zhèn)流器。 ?低柵極電荷 Qg 決定簡(jiǎn)單的驅(qū)動(dòng)要求（典型值 33nC） \n?經(jīng)過(guò)改善的柵極、雪崩和較高的重加 dv/dt 強(qiáng)度\n?Reduced RDS(on) ( 330m? （典型值）@ VGS = 10V, ID = 7.5A)\n?降低了米勒電容，且輸入電容低（典型值 Crss = 16pF） \n?可在低 EMI 的情況下提高開(kāi)關(guān)速度\n?175oC 額定結(jié)溫;

ONSEMI

安森美半導(dǎo)體