isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel PowerTrench? MOSFET 100V, 57A, 15m廓

文件：526.37 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，100V，57A，15mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 12m? （典型值）@ VGS = 10V, ID = 49A\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 100 V, 57 A, 16 m廓

文件：563.18 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：327.12 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel PowerTrench? MOSFET100V, 57A, 15m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 12m? ( Typ.) @ VGS = 10V, ID = 49A ? Fa

文件：511.68 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體