300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：359.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.04 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，300 V，14 A，290 m?，D2PAK

UniFETTM MOSFET 是飛兆半導體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設備用鎮(zhèn)流器。 ?RDS(on) = 290m? （最大值）@ VGS = 10V, ID = 7A\n?低柵極電荷（典型值 18nC） \n?低 Crss（典型值 17pF） \n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標準;

ONSEMI

安森美半導體

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：359.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體